Features
- High Temperature (175 °C) Operation
- Low Inductance (6.7 nH) Design
- Utilizes Latest 3rd Generation Silicon Carbide MOSFETS
- Integrated Temperature Sensor and Kelvin-Drain Connection
- Silicon Nitride Ceramic Substrate and Copper Baseplate
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification | View Product |
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CAB320M17XM3 New | XM3 | Half-Bridge | 1700 V | 320 A | 3.5 mΩ | Gen 3 | 175 °C | 80 x 53 x 19 mm | Yes | Industrial |
Document Type | Document Name |
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Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
User Guide | |
User Guide | |
User Guide | |
Data Sheets | |
Articles and Papers | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Sales Terms |