- EV On-Board Charger
- EV Off-Board Fast Charging
- Industrial Fast Charging
- Energy Storage Systems
![Product Shot of Wolfspeed's Reference Design of a 22kW Bi-directional High Efficiency Active Front End (AFE) Converter](/static/e577ae73f3c9fa5742b35a8fa15128ac/e08cd/crd-22ad12n-product.png)
22 kW Bi-Directional Active Front End (AFE)
- Peak efficiencies of 98.5% in both PFC and inverter mode
- Power density of 4.6kW/L
Specifications
PFC Mode
- Three Phase Input Voltage: 305Vrms → 450Vrms line-line 50/60Hz
Max current: 32A
Output DC Voltage: 650V → 900V; Max power 22kW - Single Phase Input Voltage: 180Vrms → 264Vrms 50/60Hz
Max current: 32A
Output DC Voltage: 380V → 900V; Max power 6.6kW
Inverter Mode
- DC Input Voltage: 350V → 760V DC
Max current: 20A - AC Output Voltage: 230Vrms 50Hz single phase
Max power: 6.6kW
- Switching Frequency: 45kHz
- Tooled heatsink to simulate cooling plate
- CAN interface
Reference Design Files for
- Main Board
- Controller Board
- Aux Power Board
- Firmware and GUI
- Mechanical Specifications
Documents, Tools, & Support
- Block Diagram
- Technical & Sales Documents
- Tools & Support
![crd 22ad12n block diagram](/static/7599a413ad470b334052d5d4ba209863/e81b3/crd_22ad12n_block_diagram.png)
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
MCU with control algorithms for the AC-DC and DC-DC Stages
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode