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Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C2M1000170J

1700 V, 1000 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET
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Parametric Data

Display All SKUs in Product Family (4)

1700 V Discrete Silicon Carbide MOSFETs

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1700 V Discrete Silicon Carbide MOSFETs

Product SKU
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Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Maximum Junction Temperature
Package
Qualification
C2M1000170J
Active
1700 V
1000 mΩ
5.3 A
150 °C
TO-263-7
Industrial

Ordering & Compliance

C2M1000170J Ordering

Part NumberC2M1000170JC2M1000170J-TR
Order StatusActiveActive
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Request Sample
Available
PackageTO-263-7
Container TypeTubeTape & Reel
Container Qty.50800
Standard Packing Qty.1000800
Minimum Order Qty.1000800

C2M1000170J Compliance

Halogen FreeYes
RoHS Declaration
REACh Declaration
California Prop 65Learn More
ECCNEAR99
Moisture Sensitivity LevelMSL 3

Related Documents

C2M1000170J Related Documents

Soldering & Handling
Packing & Shipping

Product Details

Features
  • High blocking voltage with low RDS(on)
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Low parasitic inductance
  • Wide creepage and clearance distance between drain and source
Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Separate Kelvin source pin lowers source inductance and provides up to 30% lower switching losses
  • Optimized packing with wide creepage and clearance distance between drain and source (~8mm) providing extra electrical isolation suitable for high pollution environments
Typical Applications
  • Auxiliary power supplies
  • Switch mode power supplies
  • Power inverters
  • 1500 V solar inverters
  • High voltage DC-DC converters
  • Motor drives
  • Pulsed power applications

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
01/2024
Application Notes
01/2024
Application Notes
01/2024
Application Notes
12/2023
Application Notes
11/2023
Application Notes
05/2023
Application Notes
01/2023
Application Notes
09/2022
Application Notes
11/2021
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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Technical SupportPower Applications Forum

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