Features
- 4th Generation SiC MOSFET
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
- Soft body diode with low reverse recovery
- Low conduction losses over temperature
1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
Wolfspeed's family of 1200 V SiC MOSFETs are optimized for use in high power applications
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed's 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. The 1200 V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance with lower turn-on losses possible within the safe operating area. Soft-switching applications can also benefit from the more linear COSS behavior. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications.
Parametric Data
1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 1200 V | 13.8 mΩ | 159 A | 251 nC | 212 pF | 1379 nC | 50 ns | 175 °C | Gen 4 | Automotive | |||
Active | 1200 V | 26 mΩ | 90 A | 136 nC | 110 pF | 590 nC | 56 ns | 175 °C | Gen 4 | Industrial | |||
Active | 1200 V | 42 mΩ | 55 A | 93 nC | 85 pF | 496 nC | 24 ns | 175 °C | Gen 4 | Industrial |
End of Section
Product Details
Benefits
- Improves system efficiency with lower switching loss
- Reduces system size, weight, and cooling requirements
- Increased power density
- Easy to parallel and compatible with standard gate drive design
Typical Applications
- Renewable energy inverters
- High voltage DC/DC converters
- Off-board chargers
- Motor drives
Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 01/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| White Papers | 01/2025 | |
| Product Catalog | 01/2025 | |
| Sales Terms | Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
| 03/2025 |
| Sales Terms | 12/2021 |