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  • 1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

Wolfspeed's family of 1200 V SiC MOSFETs are optimized for use in high power applications
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed's 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. The 1200 V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance with lower turn-on losses possible within the safe operating area. Soft-switching applications can also benefit from the more linear COSS behavior. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications.
  • Overview
  • Parametric Data
  • Product Details
  • Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Tools & Support

Parametric Data

1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
EPM4-0120-0260JS0A
New
Active
1200 V
13.8 mΩ
159 A
251 nC
212 pF
1379 nC
50 ns
175 °C
Gen 4
Automotive
CPM4-0120-0149JS0A
Active
1200 V
26 mΩ
90 A
136 nC
110 pF
590 nC
56 ns
175 °C
Gen 4
Industrial
CPM4-0120-0104JS0A
Active
1200 V
42 mΩ
55 A
93 nC
85 pF
496 nC
24 ns
175 °C
Gen 4
Industrial

End of Section

Product Details

Features

  • 4th Generation SiC MOSFET
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance
  • Soft body diode with low reverse recovery
  • Low conduction losses over temperature

Benefits

  • Improves system efficiency with lower switching loss
  • Reduces system size, weight, and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design

Typical Applications

  • Renewable energy inverters
  • High voltage DC/DC converters
  • Off-board chargers
  • Motor drives

Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
New
01/2025
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Partnering for Maximum Impact: An Interview with Paul Wheeler

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PowerMakers

Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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