1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
Wolfspeed's family of 1200 V SiC MOSFETs are optimized for use in high power applications
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed's 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. The 1200 V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance with lower turn-on losses possible within the safe operating area. Soft-switching applications can also benefit from the more linear COSS behavior. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications.
