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Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.

CPM4-0120-0104JS0A

1200 V, 42 mΩ, Gen 4, Industrial qualified, Bare Die SiC MOSFET

Parametric Data

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
CPM4-0120-0104JS0A
Active
1200 V
42 mΩ
55 A
93 nC
85 pF
496 nC
24 ns
175 °C
Gen 4
Industrial

Ordering & Compliance

CPM4-0120-0104JS0A Ordering

Part NumberCPM4-0120-0104JS0A
Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

CPM4-0120-0104JS0A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
REACH Declaration
California Prop 65Learn More
ECCNEAR99

Product Details

Features
  • 4th Generation SiC MOSFET
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance
  • Soft body diode with low reverse recovery
  • Low conduction losses over temperature
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size, weight, and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Typical Applications
  • Renewable energy inverters
  • High voltage DC/DC converters
  • Off-board chargers
  • Motor drives

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
01/2024
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Sheets & Flyers
03/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

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