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CPM3-0650-0060A

CPM3-0650-0060A
650 V, 60 mΩ, 37 A, Gen 3 Bare Die SiC MOSFET
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V Silicon Carbide MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V SiC MOSFET is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.

Products

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650 V Bare Die Silicon Carbide MOSFETs – Gen 3

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650 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-0650-0060A
650 V
60 mΩ
37 A
46 nC
80 pF
151 nC
11 ns
175 °C
Gen 3
Yes

Product Details

Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (Tj = 175°C)
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Documents, Tools & Support

Display All SKUs in Product Family (3)

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2021
Application Notes
01/2023
Application Notes
11/2023
Product Catalog
02/2024
Sales Sheets & Flyers
03/2022
Sales Terms
12/2021
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Technical SupportPower Applications Forum

Knowledge Center

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Design Resources

Low Load Efficiency Simulations with Silicon Carbide

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