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650 V Bare Die Silicon Carbide MOSFETs – Gen 3

The industry's best in class on-state resistance and switching losses for maximum efficiency and power density
Technical Support Forum
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V Silicon Carbide MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V SiC MOSFET is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.

Products

650 V Bare Die Silicon Carbide MOSFETs – Gen 3

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650 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-0650-0015A
650 V
15 mΩ
120 A
190 nC
290 pF
510 nC
22 ns
175 °C
Gen 3
Yes
650 V
45 mΩ
49 A
63 nC
100 pF
247 nC
13 ns
175 °C
Gen 3
Yes
650 V
60 mΩ
37 A
46 nC
80 pF
151 nC
11 ns
175 °C
Gen 3
Yes

Product Details

Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (Tj = 175°C)
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Application Notes
Application Notes
Product Catalog
Sales Sheets & Flyers
Sales Sheets & Flyers
Sales Terms
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum

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