Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
650 V Bare Die SiC MOSFETs – Gen 3
The industry's best in class on-state resistance and switching losses for maximum efficiency and power density
Wolfspeed extends its silicon carbide (SiC) technology leadership with the 3rd-Generation 650 V SiC MOSFETs. Enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. 650 V SiC MOSFETs are ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle (EV) charging systems, energy storage systems, uninterruptible power supplies (UPS) and battery management systems.
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Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 650 V | 15 mΩ | 120 A | 190 nC | 290 pF | 510 nC | 22 ns | 175 °C | Gen 3 | Industrial | |||
Active | 650 V | 45 mΩ | 49 A | 63 nC | 100 pF | 247 nC | 13 ns | 175 °C | Gen 3 | Industrial | |||
Active | 650 V | 60 mΩ | 37 A | 46 nC | 80 pF | 151 nC | 11 ns | 175 °C | Gen 3 | Industrial |
Knowledge Center
As AI scales, a greater lens is on the upstream power sources that are expected to keep up with rapidly expanding data center deployments. Amperesand is helping build the cornerstone of tomorrow’s grid by developing highly reliable, medium voltage (MV) SiC-based solid state transformers. Read more to learn how Amperesand and Wolfspeed partnered to make it happen.