Features
- Low On-State Resistance over Temperature
- Low Parasitic Capacitances
- Fast Diode with ultra low reverse recovery
- High Temperature Operation (Tj = 175°C)
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V Silicon Carbide MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V SiC MOSFET is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM3-0650-0015A | 650 V | 15 mΩ | 120 A | 190 nC | 290 pF | 510 nC | 22 ns | 175 °C | Gen 3 | Yes | ||
CPM3-0650-0045A New | 650 V | 45 mΩ | 49 A | 63 nC | 100 pF | 247 nC | 13 ns | 175 °C | Gen 3 | Yes | ||
CPM3-0650-0060A New | 650 V | 60 mΩ | 37 A | 46 nC | 80 pF | 151 nC | 11 ns | 175 °C | Gen 3 | Yes |
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