Features
- Low On-State Resistance over Temperature
- Low Parasitic Capacitances
- Fast Diode with ultra low reverse recovery
- High Temperature Operation (Tj = 175°C)
650 V Bare Die Silicon Carbide MOSFETs – Gen 3
CPM3-0650-0045A
650 V; 45 mΩ; 49 A; Gen 3 Bare Die Silicon Carbide (SiC) MOSFET
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V Silicon Carbide MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V SiC MOSFET is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.
Products
650 V Bare Die Silicon Carbide MOSFETs – Gen 3
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650 V Bare Die Silicon Carbide MOSFETs – Gen 3
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM3-0650-0045A | 650 V | 45 mΩ | 49 A | 63 nC | 100 pF | 247 nC | 13 ns | 175 °C | Gen 3 | Yes |
Product Details
Benefits
- Improves System Efficiency with lower switching and conduction losses
- Enables high switching frequency operation
- Improves System Level Power Density
- Reduces System Size; Weight; and Cooling Requirements
Applications
- Industrial Power Supplies
- Server/Telecom
- EV-Charging Systems
- Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
- Battery Management Systems (BMS)
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
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Documents
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Document Type | Document Name |
|---|---|
| Application Notes | |
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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