Skip to Main Content
  • English
  • 简体中文
  • 繁體中文
Contact
View Cart
Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.

CPM3-0650-0045A

650 V, 45 mΩ, Gen 3, Industrial qualified, Bare Die SiC MOSFET

Parametric Data

Display All SKUs in Product Family (3)

650 V Bare Die Silicon Carbide MOSFETs – Gen 3

No filters selected, showing all 1 products

650 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Qualification
CPM3-0650-0045A
Active
650 V
45 mΩ
49 A
63 nC
100 pF
247 nC
13 ns
175 °C
Gen 3
Industrial

Ordering & Compliance

CPM3-0650-0045A Ordering

Part NumberCPM3-0650-0045A
Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

CPM3-0650-0045A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
REACh Declaration
California Prop 65Learn More
ECCNEAR99

Product Details

Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (Tj = 175°C)
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Typical Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Sheets & Flyers
03/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
View Now  Videos
Technical SupportPower Applications Forum

Footer

Social Media

  • Instagram
  • X
  • LinkedIn
  • YouTube
Copyright © 2024 Wolfspeed, Inc.