碳化硅 MOSFET – 裸芯片

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产品SKU	阻断电压	导通电阻 R_DS(ON) @ 25°C	额定电流	输出电容	反向恢复电荷 (Qrr)	反向恢复时间 (Trr)	最高结点温度	代际	新设计推荐？
CPM3-0650-0060A	650 V	60 mΩ	37 A	80 pF	151 nC	11 ns	175 °C	Gen 3	Yes
CPM3-0650-0045A	650 V	45 mΩ	49 A	100 pF	247 nC	13 ns	175 °C	Gen 3	Yes
CPM3-0650-0015A	650 V	15 mΩ	120 A	290 pF	510 nC	22 ns	175 °C	Gen 3	Yes
EPM3-0750-0010D New	750 V	10 mΩ	178 A	340 pF	737 nC	25 ns	175 °C	Gen 3+	Yes
CPM3-0900-0065A	900 V	65 mΩ	32 A	70 pF	220 nC	22 ns	175 °C	Gen 3	Yes
CPM3-0900-0030A	900 V	30 mΩ	66 A	137 pF	545 nC	62 ns	175 °C	Gen 3	Yes
CPM3-0900-0010A	900 V	10 mΩ	194 A	360 pF	1300 nC	36 ns	175 °C	Gen 3	Yes
EPM3-1200-R013D New	1200 V	13 mΩ	160 A	226 pF	1259 nC	34 ns	175 °C	Gen 3+	Yes
EPM3-1200-0014D1 New	1200 V	14 mΩ	149 A	200 pF	1068 nC	31 ns	175 °C	Gen 3+	Yes
CPM3-1200-0160A New	1200 V	160 mΩ	17 A	39 pF	194 nC	34 ns	150 °C	Gen 3	Yes
EPM3-1200-0017D1-R01	1200 V	17 mΩ	134 A	221 pF	1242 nC	53 ns	175 °C	Gen 3	Yes
EPM3-1200-0017D-R01	1200 V	17 mΩ	134 A	220 pF	1100 nC	52 ns	175 °C	Gen 3	Yes
CPM2-1200-0080A	1200 V	80 mΩ	36 A	92 pF	152 nC	24 ns	175 °C	Gen 2	No
CPM2-1200-0040A	1200 V	40 mΩ	60 A	157 pF	964 nC	63 ns	175 °C	Gen 2	No
CPM2-1200-0025A	1200 V	25 mΩ	81 A	235 pF	406 nC	45 ns	175 °C	Gen 2	No
CPM3-1200-0021A	1200 V	21 mΩ	100 A	180 pF	928 nC	34 ns	175 °C	Gen 3	Yes
CPM3-1200-0032A	1200 V	32 mΩ	63 A	130 pF	478 nC	27 ns	175 °C	Gen 3	Yes
CPM3-1200-0016A	1200 V	16 mΩ	112 A	230 pF	1238 nC	30 ns	175 °C	Gen 3	Yes
CPM3-1200-0075A	1200 V	75 mΩ	30 A	58 pF	109 nC	25 ns	175 °C	Gen 3	Yes
CPM3-1200-0013A	1200 V	13 mΩ	149 A	284 pF	1800 nC	43 ns	175 °C	Gen 3	Yes
CPM3-1700-R020E	1700 V	17.5 mΩ	120 A	188 pF	2557 nC	43 ns	175 °C	Gen 3	Yes
CPM3-3300-R050A	3300 V	53 mΩ	52 A	140 pF	2.5 nC	124 ns	175 °C	Gen 3 MOS	Yes

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碳化硅 MOSFET – 裸芯片

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.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Wolfspeed’s Silicon Carbide MOSFETs Address High-Power Application Needs

Wolfspeed’s Silicon Carbide MOSFETs Address High-Power Application Needs