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Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.

CPM3-1200-0013A

1200 V, 13 mΩ, Gen 3, Industrial qualified, Bare Die SiC MOSFET

Parametric Data

Display All SKUs in Product Family (6)

1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
CPM3-1200-0013A
Active
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3

Ordering & Compliance

CPM3-1200-0013A Ordering

Part NumberCPM3-1200-0013A
Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

CPM3-1200-0013A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
REACh Declaration
California Prop 65Learn More
ECCNEAR99

Product Details

Features
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Typical Applications
  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
07/2023
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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Technical SupportPower Applications Forum

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