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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Wolfspeed's Gen 3 family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications
Wolfspeed offers a family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as Uninterruptible Power Supplies (UPS); motor drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more. Based on the latest 3rd generation technology; Wolfspeed's 1200 V Silicon Carbide MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Pairing Wolfspeed's 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size; weight; design complexity; and cost in most high-power applications. A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

Products

1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Status
CPM3-1200-0160A
1200 V
160 mΩ
17 A
38 nC
39 pF
194 nC
34 ns
150 °C
Gen 3
Active
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3
Active
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Active
1200 V
16 mΩ
112 A
227 nC
230 pF
1238 nC
30 ns
175 °C
Gen 3
Active
1200 V
32 mΩ
63 A
118 nC
130 pF
478 nC
27 ns
175 °C
Gen 3
Active
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3
Active

Product Details

Features
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Applications
  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
07/2023
Data Sheets
07/2023
Data Sheets
07/2023
Data Sheets
07/2023
Data Sheets
07/2023
Data Sheets
07/2022
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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