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    • Bare Die Silicon Carbide MOSFETs
    • 1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
    • EPM3-1700-0900A

    EPM3-1700-0900A

    1700 V, 3.9 A, Gen 3 Bare Die SiC MOSFET
    Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
    • Overview
    • Parametric Data
    • Order Details
    • Product Details
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    • Overview
    • Parametric Data
    • Order Details
    • Product Details
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    Parametric Data

    Display All SKUs in Product Family (2)
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    Product SKU
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    Data Sheet
    Status
    Blocking Voltage
    RDS(ON) at 25°C
    Current Rating
    Gate Charge Total
    Output Capacitance
    Reverse Recovery Charge (Qrr)
    Reverse Recovery Time (Trr)
    Tjmax
    Generation
    Qualification
    EPM3-1700-0900A

    Purchase EPM3-1700-0900A
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    Active
    1700 V
    900 mΩ
    3.9 A
    10 nC
    8 pF
    72 nC
    40 ns
    175 °C
    Gen 3
    Automotive

    Knowledge Center

    View All

    Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices 

    Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.
    Continue Reading  Technical Articles

    Reimagine Auxiliary Power Supply System Durability & Cost with Wolfspeed’s New 1700 V MOSFET Technology

    Continue Reading  Technical Articles

    How Wolfspeed Power Modules are Revolutionizing 3-Phase Industrial Low Voltage Motor Drives

    Continue Reading  Technical Articles

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    Ordering & Compliance

    EPM3-1700-0900A Ordering

    Order Status
    		Active
    Buy Online
    Container Type
    		Available in Film Frame and Tape & Reel

    EPM3-1700-0900A Compliance

    Halogen Free
    		Yes
    Lead Free
    		Yes
    RoHS Declaration
    Download
    REACH Declaration
    Download
    California Prop 65
    		Learn More
    ECCN
    		EAR99

    Product Details

    Features

    • Enhanced 3rd Generation SiC MOSFET
    • High blocking voltage with low on-resistance
    • High speed switching with low capacitance
    • Fast intrinsic diode with low reverse recovery

    Benefits

    • Improves System Efficiency with lower switching and conduction losses
    • Reduces System Size, Weight, and Cooling Requirements
    • Enables high switching frequency operation
    • Easy to parallel and compatible with standard gate drive design

    Applications

    • Auxiliary Power Supplies
    • OBC & DC/DC Converters
    • Solar – Residential Applications

    Documents, Tools & Support

    • Technical & Sales Documents
    • Tools & Support
    • Compliance

    Documents

    10 Documents Available
    Document Type
    Document Name
    Last Updated
    Application Notes
    PRD-09129: Mitigating Package Induced Failures (PDF)
    		05/2025
    Application Notes
    PRD-08937: Impact of VGS on SiC MOSFET Characteristics (PDF)
    		11/2024
    Application Notes
    PRD-07969: Sintering Considerations and the Die Top System (PDF)
    		04/2024
    Application Notes
    PRD-08296: SiC MOSFET Short Circuit Events (PDF)
    		11/2023
    Application Notes
    PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
    		01/2023
    White Papers
    Designed to Last, Even in the Harshest Environments (PDF)
    New
    		11/2025
    White Papers
    Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
    		11/2025
    White Papers
    SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
    New
    		11/2025
    Sales Sheets & Flyers
    Wolfspeed Silicon Carbide Solutions for EV Inverters (PDF)
    		03/2022
    Sales Terms
    Wolfspeed, Inc. Sales Terms and Conditions (PDF)
    		04/2025

    Support

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