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    • Bare Die Silicon Carbide MOSFETs
    • 3300 V Bare Die Silicon Carbide MOSFETs
    • CPM3-3300-R050A

    CPM3-3300-R050A

    3300 V, 53 mΩ, Gen 3, Industrial qualified, Bare Die SiC MOSFET
    Download Data Sheet
    Wolfspeed CPM3-3300-R050A Silicon Carbide MOSFET Gen 3
    • Overview
    • Parametric Data
    • Order Details
    • Product Details
    • Tools & Support
    • Overview
    • Parametric Data
    • Order Details
    • Product Details
    • Tools & Support

    Parametric Data

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    Data Sheet
    Status
    Blocking Voltage
    RDS(ON) at 25°C
    Current Rating
    Gate Charge Total
    Output Capacitance
    Reverse Recovery Charge (Qrr)
    Reverse Recovery Time (Trr)
    Tjmax
    Generation
    Qualification
    CPM3-3300-R050A

    Purchase CPM3-3300-R050A
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    Active
    3300 V
    53 mΩ
    52 A
    255 nC
    140 pF
    2.5 nC
    124 ns
    175 °C
    Gen 3
    Industrial

    Knowledge Center

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    PowerMakers:
    How Wolfspeed’s Fayetteville Team Turns Silicon Carbide Expertise into Customer Momentum

    At our Fayetteville site, Ty McNutt and his team don’t just solve for specs —they rethink systems. That’s the difference between supplying parts and becoming the partner customers rely on.
    Continue Reading  Thought Leadership

    Beyond Silicon’s Limits:
    How High‑Voltage Silicon Carbide is Redefining Critical Power

    Continue Reading  Thought Leadership

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    Continue Reading  Technical Articles

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    Ordering & Compliance

    CPM3-3300-R050A Ordering

    Part Number
    CPM3-3300-R050A
    Order Status
    Active
    Buy Online
    Container Type
    Available in Film Frame and Tape & Reel

    CPM3-3300-R050A Compliance

    Halogen Free
    Yes
    Lead Free
    Yes
    RoHS Declaration
    Download
    REACH Declaration
    Download
    California Prop 65
    Learn More
    ECCN
    EAR99

    Product Details

    Features

    • Low RDS(on)
    • Avalanche Ruggedness
    • Easy to Parallel and Simple to Drive
    • Temperature-Independent High-Speed Switching

    Benefits

    • Increased switching speed and efficiency compared to Si IGBTs
    • Intrinsic body diode reduces BOM components
    • High temperature operation, -55º C to 175º C
    • Enhanced reliability

    Typical Applications

    • Heavy-duty industrial e-mobility (transportation, construction, agricultural, mining, and logging vehicles)
    • Ultra-fast DC chargers
    • Industrial motor drives
    • Industrial uninterruptible power supply (UPS) systems
    • Marine & aerospace propulsion
    • Terrestrial power distribution systems
    • High voltage direct current (HVDC) and flexible AC transmission system (FACTS) controllers

    Tools & Support

    • Technical & Sales Documents
    • Compliance

    Documents

    11 Documents Available
    Document Type
    Document Name
    Last Updated
    Data Sheets
    CPM3-3300-R050A (PDF)
    09/2024
    Application Notes
    PRD-09129: Mitigating Package Induced Failures (PDF)
    05/2025
    Application Notes
    PRD-08937: Impact of VGS on SiC MOSFET Characteristics (PDF)
    11/2024
    Application Notes
    PRD-08296: SiC MOSFET Short Circuit Events (PDF)
    11/2023
    Application Notes
    PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
    01/2023
    White Papers
    Designed to Last, Even in the Harshest Environments (PDF)
    11/2025
    White Papers
    Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
    11/2025
    White Papers
    SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
    New
    11/2025
    Sales Sheets & Flyers
    3300 V LM SiC Half-Bridge Power Modules Product Brief (PDF)
    06/2024
    Sales Terms
    Wolfspeed, Inc. Sales Terms and Conditions (PDF)
    04/2025
    Product Catalog
    Power Product Line Card (PDF)
    01/2025

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