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3300 V Bare Die Silicon Carbide MOSFETs

Wolfspeed CPM3-3300-R050A Silicon Carbide MOSFET Gen 3
Wolfspeed's 3300 V bare die silicon carbide MOSFETs offer high reliability and ruggedness for high power applications.
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The MOSFETs enable greater system efficiency and smaller, more power dense systems optimized for use in heavy duty equipment, industrial uninterruptible power supply (UPS) systems, industrial motor drives, and more.


3300 V Bare Die Silicon Carbide MOSFETs

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3300 V Bare Die Silicon Carbide MOSFETs

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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Recommended For New Design?
3300 V
53 mΩ
52 A
255 nC
140 pF
2.5 nC
124 ns
175 °C
Gen 3 MOS

Product Details

  • Low RDS(on)
  • Avalanche Ruggedness
  • Easy to Parallel and Simple to Drive
  • Temperature-Independent High-Speed Switching
  • Increased switching speed and efficiency compared to Si IGBTs
  • Intrinsic body diode reduces BOM components
  • High temperature operation, -55º C to 175º C
  • Enhanced reliability
  • Heavy-duty industrial e-mobility (transportation, construction, agricultural, mining, and logging vehicles)
  • Ultra-fast DC chargers
  • Industrial motor drives
  • Industrial uninterruptible power supply (UPS) systems
  • Marine & aerospace propulsion
  • Terrestrial power distribution systems
  • High voltage direct current (HVDC) and flexible AC transmission system (FACTS) controllers

Documents, Tools & Support


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Low Load Efficiency Simulations with Silicon Carbide

Power electronics devices are almost never working at maximum of their capabilities because of safety, reliability but even application mission profile. Our experts will demonstrate how Wolfspeed's free SpeedFit simulation tool is the perfect starting point before moving to accurate LTSpice simulations.
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