Features
- Minimum of 900V Vbr across entire operating temperature range
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
900 V Bare Die Silicon Carbide MOSFETs – Gen 3
CPM3-0900-0010A
900 V, 10 mΩ, 194 A, Gen 3 Bare Die SiC MOSFET
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology, the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900 V platform enables smaller, lighter, and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
Products
900 V Bare Die Silicon Carbide MOSFETs – Gen 3
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900 V Bare Die Silicon Carbide MOSFETs – Gen 3
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM3-0900-0010A | 900 V | 10 mΩ | 194 A | 210 nC | 360 pF | 1300 nC | 36 ns | 175 °C | Gen 3 | Yes |
Product Details
Benefits
- High-voltage; high-temperature; and high-humidity resistance enables true outdoor application for solar power conversion and off-board charging
- Improves system efficiency with significantly lower switching loss
- Reduces system size; weight; and cooling requirements
- Enables increased power density
- Easy to parallel and compatible with standard gate drive designs
Applications
- Solar inverters
- Motor Drives
- High voltage DC/DC converters
- Switch Mode Power Supplies
- Solid State Circuit Breakers
- Off Board Chargers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Product Catalog | |
| Sales Terms | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
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