- Minimum of 900V Vbr across entire operating temperature range
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology; the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications; including renewable energy inverters; electric vehicle charging systems; and three-phase industrial power supplies; the new 900V platform enables smaller; lighter; and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
RDS(ON) at 25°C
Gate Charge Total
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Recommended For New Design?