Features
- Minimum of 900V Vbr across entire operating temperature range
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology; the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications; including renewable energy inverters; electric vehicle charging systems; and three-phase industrial power supplies; the new 900V platform enables smaller; lighter; and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM3-0900-0010A | 900 V | 10 mΩ | 194 A | 210 nC | 360 pF | 1300 nC | 36 ns | 175 °C | Gen 3 | Yes | ||
CPM3-0900-0030A | 900 V | 30 mΩ | 66 A | 87 nC | 137 pF | 545 nC | 62 ns | 175 °C | Gen 3 | Yes | ||
CPM3-0900-0065A | 900 V | 65 mΩ | 32 A | 33 nC | 70 pF | 220 nC | 22 ns | 175 °C | Gen 3 | Yes |
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