- Minimum of 900V Vbr across entire operating temperature range
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology; the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications; including renewable energy inverters; electric vehicle charging systems; and three-phase industrial power supplies; the new 900 V platform enables smaller; lighter; and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
RDS(ON) at 25°C
Gate Charge Total
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Recommended For New Design?
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs