Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
碳化硅功率模块
采用我们符合行业标准封装和针对碳化硅优化封装的功率模块,可提高系统级效率,缩小系统尺寸并减轻重量。这些模块专为严苛的高电压环境而开发。
产品
No filters selected, showing all 50 products
Filter By
产品SKU | 在线购买 | 索取样品 | 数据手册 | CAD模型 | Status | 封装 | 配置 | 阻断电压 | 额定电流 | 导通电阻 RDS(ON) @ 25°C | 最高结点温度 | 模块尺寸 | Pre-Applied TIM | 认证 | 代际 | 浏览产品 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | Y | Six-pack (three-phase) | 1200 V | 600 A | 2.1 mΩ | 175 °C | 154.5 x 126.5 x 32 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | Y | Six-pack (three-phase) | 1200 V | 460 A | 2.8 mΩ | 175 °C | 154.5 x 126.5 x 32 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | Y | Six-pack (three-phase) | 1200 V | 330 A | 4.3 mΩ | 175 °C | 154.5 x 126.5 x 32 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | Y | Six-pack (three-phase) | 1200 V | 330 A | 4.3 mΩ | 175 °C | 154.5 x 126.5 x 32 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | Y | Six-pack (three-phase) | 1200 V | 460 A | 2.8 mΩ | 175 °C | 154.5 x 126.5 x 32 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | Y | Six-pack (three-phase) | 1200 V | 600 A | 2.1 mΩ | 175 °C | 154.5 x 126.5 x 32 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | X | Half-Bridge | 1200 V | 525 A | 2.6 mΩ | 175 °C | 80 x 53 x 23.3 mm | No | Industrial | Gen 3 | ![]() | |||||
Active | T | Single Switch | 1200 V | 160 A | 9.3 mΩ | 175 °C | 43.65 x 18.9 x 19 mm | No | Automotive | Gen 4 | ![]() | |||||
Active | T | Single Switch | 1200 V | 160 A | 9.3 mΩ | 175 °C | 43.65 x 18.9 x 18.5 mm | No | Automotive | Gen 4 | ![]() | |||||
Active | T | Single Switch | 1200 V | 250 A | 6.2 mΩ | 175 °C | 43.65 x 18.9 x 19 mm | No | Automotive | Gen 4 | ![]() | |||||
Active | T | Single Switch | 1200 V | 250 A | 6.2 mΩ | 175 °C | 43.65 x 18.9 x 18.5 mm | No | Automotive | Gen 4 | ![]() | |||||
Active | T | Single Switch | 1200 V | 320 A | 4.6 mΩ | 175 °C | 43.65 x 18.9 x 19 mm | No | Automotive | Gen 4 | ![]() | |||||
Active | T | Single Switch | 1200 V | 320 A | 4.6 mΩ | 175 °C | 43.65 x 18.9 x 18.5 mm | No | Automotive | Gen 4 | ![]() | |||||
Active | T | Single Switch | 650 V | 440 A | 3.3 mΩ | 175 °C | 43.65 x 18.9 x 19 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | T | Single Switch | 650 V | 440 A | 3.3 mΩ | 175 °C | 43.65 x 18.9 x 18.5 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | T | Single Switch | 650 V | 220 A | 6.5 mΩ | 175 °C | 43.65 x 18.9 x 19 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | T | Single Switch | 650 V | 220 A | 6.5 mΩ | 175 °C | 43.65 x 18.9 x 18.5 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | T | Single Switch | 650 V | 330 A | 4.4 mΩ | 175 °C | 43.65 x 18.9 x 18.5 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | T | Single Switch | 650 V | 330 A | 4.4 mΩ | 175 °C | 43.65 x 18.9 x 19 mm | No | Automotive | Gen 3 | ![]() | |||||
Active | L | Half-Bridge | 3300 V | 900 A | 2 mΩ | 175 °C | 144 x 100 x 40 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | L | Half-Bridge | 3300 V | 770 A | 2.7 mΩ | 175 °C | 144 x 100 x 40 mm | No | Industrial | Gen 3 | ![]() | |||||
Active | H | Half-Bridge | 1200 V | 760 A | 1.33 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 3 | ![]() | |||||
Active | H | Half-Bridge | 1200 V | 480 A | 2.29 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 3 | ![]() | |||||
Active | H | Half-Bridge | 1700 V | 380 A | 3.3 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 3 | ![]() | |||||
Active | H | Half-Bridge | 1700 V | 500 A | 2.5 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 3 | ![]() | |||||
Active | H | Half-Bridge | 1700 V | 650 A | 1.67 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 3 | ![]() | |||||
Active | H | Half-Bridge Right GK for Paralleling | 1200 V | 760 A | 1.33 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 3 | ![]() | |||||
Active | H | Half-Bridge Rectifier | 1700 V | 600 A | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | ![]() | |||||||
Active | H | Half-Bridge Rectifier | 1200 V | 600 A | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | ![]() | |||||||
Active | H | Common-Source | 1700 V | 650 A | 1.42 mΩ | 175 °C | 110 x 65 x 12.2 mm | No | Industrial | Gen 3 | ![]() | |||||
Active | H | Common-Source | 1700 V | 650 A | 1.42 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 3 | ![]() | |||||
Active | H | Common-Source | 1200 V | 800 A | 1.3 mΩ | 175 °C | 110 x 65 x 12.2 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | H | Common-Source | 1200 V | 800 A | 1.3 mΩ | 175 °C | 110 x 65 x 12.2 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | Full-Bridge | 3300 V | 100 A | 20 mΩ | 175 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | Full-Bridge | 3300 V | 100 A | 20 mΩ | 175 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 1200 V | 200 A | 4.1 mΩ | 175 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 1200 V | 200 A | 4.1 mΩ | 175 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 1200 V | 200 A | 5.3 mΩ | 175 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 1200 V | 200 A | 5.3 mΩ | 175 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | T-Type | 1200 V | 100 A | 11 mΩ | 175 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | T-Type | 1200 V | 100 A | 11 mΩ | 175 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Full-Bridge | 1200 V | 100 A | 11 mΩ | 175 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | Full-Bridge | 1200 V | 100 A | 11 mΩ | 175 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Half-Bridge | 1200 V | 200 A | 4.1 mΩ | 175 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Half-Bridge | 1200 V | 200 A | 4.1 mΩ | 175 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | 150 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | 150 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | 150 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | 150 °C | 62.8 x 56.7 mm | No | Industrial | Gen 4 | ![]() | |||||
Active | G | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | 150 °C | 62.8 x 56.7 mm | Yes | Industrial | Gen 4 | ![]() |
产品系列
知识中心
随着人工智能规模的不断扩展,人们越来越关注上游电力资源能否跟上快速扩张的数据中心部署需求。Amperesand 正通过开发高可靠性、中电压、碳化硅基固态变压器,助力构建未来电网的基石。阅读更多内容,了解 Amperesand 与 Wolfspeed 如何携手实现这一目标。












