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功率产品

碳化硅功率模块

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产品

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Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
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CAB320M17XM3
XM
Half-Bridge
1700 V
320 A
3.5 mΩ
Gen 3
175 °C
80 x 53 x 19 mm
CAB400M12XM3
XM
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
CAB425M12XM3
XM
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
CAB450M12XM3
XM
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
EAB450M12XM3
XM
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
CAB600M33LM3
New
LM
Half-Bridge
3300 V
770 A
2.7 mΩ
Gen 3
175 °C
100 x 144 x 40 mm
CAB760M12HM3R
HM
Half-Bridge Right GK for Paralleling
1200 V
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
CAS380M17HM3
HM
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
CAS480M12HM3
HM
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
CAB500M17HM3
HM
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
CAR600M17HN6
HM
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
CAR600M12HN6
HM
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
CAB650M17HM3
HM
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
CAB760M12HM3
HM
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
CCB016M12GM3
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CCB016M12GM3T
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB011A12GM3
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB011A12GM3T
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008M12GM3
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008M12GM3T
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008A12GM3
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008A12GM3T
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006A12GM3
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006M12GM3
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006M12GM3T
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006A12GM3T
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CCB032M12FM3
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CCB021M12FM3
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CCB021M12FM3T
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3
150 °C
62.8 mm x 33.8 mm
CCB032M12FM3T
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CBB032M12FM3
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CBB032M12FM3T
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CBB021M12FM3
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CBB021M12FM3T
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB016M12FM3
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB016M12FM3T
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB011M12FM3
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB011M12FM3T
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB003M09DM3
Coming
Soon
DM
Half-Bridge
900 V
350 A
2.5 mΩ
Gen 3 MOS
175 °C
51.6 mm x 40.8 mm
CAS120M12BM2
62 mm
Half-Bridge
1200 V
120 A
13 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
WAS175M12BM3
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS175M12BM3
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS175M12BM3
Coming
Soon
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS300M17BM2
62 mm
Half-Bridge
1700 V
225 A
8 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
CAS300M12BM2
62 mm
Half-Bridge
1200 V
300 A
4.2 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
WAB300M12BM3
62 mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
WAS310M17BM3
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS310M17BM3
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS310M17BM3
Coming
Soon
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAS350M12BM3
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS350M12BM3
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS350M12BM3
Coming
Soon
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAB400M12BM3
62 mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
CAB530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
150 °C
105 x 62 x 31 mm
CAS530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAS530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS530M12BM3
Coming
Soon
62 mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm

产品系列

Wolfspeed WolfPACK™ Silicon Carbide Power Module Family

文档、工具和支持

Documents

Document Type
Document Name
Last Updated
用户指南
01/2024
用户指南
01/2024
用户指南
01/2024
用户指南
01/2024
用户指南
01/2024
用户指南
12/2023
用户指南
12/2023
用户指南
10/2023
用户指南
09/2023
应用指南
03/2024
应用指南
01/2024
应用指南
01/2024
应用指南
01/2024
应用指南
11/2023
应用指南
08/2023
应用指南
01/2023
销售宣传单页
05/2023
销售宣传单页
02/2023
销售条款
12/2021
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功率模块

功率模块：一种满足 EMI 规范的捷径

The design and geometry of power modules enable EMI modeling which empowers designers to predict and understand their system’s EMI behavior early in the design process. 
Continue Reading  技术文章

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