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    • Bare Die Silicon Carbide MOSFETs
    • 1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
    • EPM3-1200-0017D-R01

    EPM3-1200-0017D-R01

    1200 V, 17 mΩ, Gen 3, Automotive qualified, Bare Die SiC MOSFET
    Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
    • Overview
    • Parametric Data
    • Order Details
    • Product Details
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    • Overview
    • Parametric Data
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    Parametric Data

    Display All SKUs in Product Family (2)
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    Product SKU
    Buy Online
    Data Sheet
    Status
    Blocking Voltage
    RDS(ON) at 25°C
    Current Rating
    Output Capacitance
    Reverse Recovery Charge (Qrr)
    Reverse Recovery Time (Trr)
    Tjmax
    Generation
    Qualification
    EPM3-1200-0017D-R01

    Purchase EPM3-1200-0017D-R01
    Create a BOM or add to cart on arrow.com

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    Active
    1200 V
    17 mΩ
    134 A
    220 pF
    1100 nC
    52 ns
    175 °C
    Gen 3
    Automotive

    Knowledge Center

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    Beyond Silicon’s Limits:
    How High‑Voltage Silicon Carbide is Redefining Critical Power

    Continue Reading  Thought Leadership

    Wolfspeed’s 300 mm Silicon Carbide Technology as a Materials Foundation for Next-Generation AI and HPC Advanced Packaging

    Continue Reading  Technical Articles

    Answering the call:
    Powering AI with reliable silicon carbide-based solid-state transformers

    Continue Reading  White Paper

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    Ordering & Compliance

    EPM3-1200-0017D-R01 Ordering

    Part Number
    EPM3-1200-0017D-R01
    Order Status
    		Active
    Buy Online
    Container Type
    		Available in Film Frame and Tape & Reel

    EPM3-1200-0017D-R01 Compliance

    Halogen Free
    		Yes
    Lead Free
    		Yes
    RoHS Declaration
    Download
    REACH Declaration
    Download
    California Prop 65
    		Learn More
    ECCN
    		EAR99

    Product Details

    Features

    • Automotive Qualified
    • High blocking voltage with industry leading low RDS(on) over temperature stability
    • Resistant to latch-up
    • High gate resistance for drives

    Benefits

    • Improves System Efficiency with lower switching and conduction losses
    • Reduces System Size, Weight, and Cooling Requirements
    • Enables high switching frequency operation
    • Easy to parallel and compatible with standard gate drive design

    Typical Applications

    • Automotive Drivetrain
    • Motor Drives
    • Solid State Circuit Breaker
    • Resonant Topologies

    Documents, Tools & Support

    • Technical & Sales Documents
    • Tools & Support
    • Compliance

    Documents

    10 Documents Available
    Document Type
    Document Name
    Last Updated
    Application Notes
    PRD-08937: Impact of VGS on SiC MOSFET Characteristics (PDF)
    		11/2024
    Application Notes
    PRD-07969: Sintering Considerations and the Die Top System (PDF)
    		04/2024
    Application Notes
    PRD-08296: SiC MOSFET Short Circuit Events (PDF)
    		11/2023
    Application Notes
    PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
    		01/2023
    White Papers
    Designed to Last, Even in the Harshest Environments (PDF)
    New
    		11/2025
    White Papers
    Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
    		11/2025
    White Papers
    SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
    New
    		11/2025
    Sales Sheets & Flyers
    Wolfspeed Silicon Carbide Solutions for EV Inverters (PDF)
    		03/2022
    Sales Terms
    Wolfspeed, Inc. Sales Terms and Conditions (PDF)
    		04/2025
    Product Catalog
    Power Product Line Card (PDF)
    		01/2025

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