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EPM3-1200-0017D-R01

Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
EPM3-1200-0017D-R01
1200 V, 17 mΩ, 134 A, Gen 3 Bare Die SiC MOSFET
Wolfspeed continues to lead in Silicon Carbide with our first Automotive 1200 V E-Series line of Bare Die Silicon Carbide (SiC) MOSFETs. The portfolio is fully automotive qualified, with high blocking voltage with the industry-leading low RDS(ON) over temperature stability, enabling low conduction losses and highest figures of merit in the most demanding applications. These devices are optimized for use in high power applications such as automotive drive trains, motor drives, solid state circuit breakers, resonant topologies, and more. Based on the latest 3rd generation technology, Wolfspeed’s 1200 V Bare Die SiC MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their application. The 1200 V MOSFETs are designed for low RDS(ON), are easy to parallel and compatible with standard gate drive design. The efficiency gained by moving from a silicon-based solution to Silicon Carbide can help reduce system size, weight, and cooling requirements. A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

Products

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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Status
EPM3-1200-0017D-R01
1200 V
17 mΩ
134 A
220 pF
1100 nC
52 ns
175 °C
Gen 3
Active

Product Details

Features
  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Application
  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies

Documents, Tools & Support

Display All SKUs in Product Family (2)

Documents

Document Type
Document Name
Last Updated
Application Notes
04/2024
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Sheets & Flyers
03/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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Design Resources

The Silicon Carbide Landscape and Advantage

Wolfspeed’s silicon carbide expert Guy Moxey kicks of Wolfspeed’s 2024 Designer’s Guide by exploring the proliferation of silicon carbide across applications, including electric vehicles, industrial motor drives and e-mobility, and ways Wolfspeed is meeting growing global demand.
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Silicon Carbide Device Modeling

Learn how designers new to silicon carbide can leverage Wolfspeed’s design support tools to generate models that solve system design challenges. During this session learn which Wolfspeed design tools are best suited to your application.
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