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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

EPM3-1200-R015D
1200 V, 15 mΩ, 148 A, Gen3+ Bare Die SiC MOSFET
Wolfspeed’s Generation 3+ of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design.

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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
EPM3-1200-R015D
New
1200 V
15 mΩ
148 A
200 pF
1388 nC
34 ns
175 °C
Gen 3+
Yes

Product Details

Features
  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Application
  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Sales Sheets & Flyers
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

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