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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Wolfspeed EPM3 Bare Die package
Wolfspeed's Automotive Qualified Gen3+ 1200V 14mΩ Silicon Carbide Bare Die MOSFETs

Wolfspeed’s Generation 3+ of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for applications in automotive drivetrain and motor drives.

1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
EPM3-1200-R013D
New
1200 V
13 mΩ
160 A
226 pF
1259 nC
34 ns
175 °C
Gen 3+
Yes
EPM3-1200-0014D1
New
1200 V
14 mΩ
149 A
200 pF
1068 nC
31 ns
175 °C
Gen 3+
Yes

Product Details

Features
  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Application
  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies

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