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1200 V Bare Die SiC MOSFETs – Gen 2

Wolfspeed's Gen 2 family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications
NOTE: Not recommended for new designs. 1200 V Bare Die Silicon Carbide MOSFETs – Gen 3 is the recommended replacement.

Products

1200 V Bare Die SiC MOSFETs – Gen 2

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1200 V Bare Die SiC MOSFETs – Gen 2

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Status
CPM2-1200-0080A
1200 V
80 mΩ
36 A
71 nC
92 pF
152 nC
24 ns
175 °C
Gen 2
NRND
1200 V
40 mΩ
60 A
131 nC
157 pF
964 nC
63 ns
175 °C
Gen 2
NRND
1200 V
25 mΩ
81 A
161 nC
235 pF
406 nC
45 ns
175 °C
Gen 2
NRND

Product Details

Features
  • Robust intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
Applications
  • Renewable energy Inverters
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
12/2023
Data Sheets
12/2023
Data Sheets
12/2023
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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