Features
- Robust intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
- Low conduction losses over temperature
- Avalanche ruggedness
1200 V Bare Die SiC MOSFETs – Gen 2
CPM2-1200-0025A
1200 V; 25 mΩ; 81 A; Gen 2 Bare Die Silicon Carbide (SiC) MOSFET
NOTE: Not recommended for new designs. 1200 V Bare Die Silicon Carbide MOSFETs – Gen 3 is the recommended replacement.
Products
1200 V Bare Die SiC MOSFETs – Gen 2
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1200 V Bare Die SiC MOSFETs – Gen 2
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CPM2-1200-0025A | 1200 V | 25 mΩ | 81 A | 161 nC | 235 pF | 406 nC | 45 ns | 175 °C | Gen 2 | No |
Product Details
Benefits
- Improves system efficiency with lower switching loss
- Reduces system size; weight; and cooling requirements
- Increased power density
Applications
- Renewable energy Inverters
- High voltage DC/DC converters
- Switch Mode Power Supplies
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Product Catalog | |
| Sales Terms | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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