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Nitride Epitaxy

Wolfspeed is transitioning to a new wafer scribe format based upon SEMI specification M12-0706. This conversion, which is projected to be fully integrated in 2022, brings several improvements. The M12-based scribe will be positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. The new format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such event.

Proven Expertise in SiC & GaN Materials for RF Applications

With more than 30 years of development and manufacturing experience, Wolfspeed is driving innovation with the industry’s broadest range of SiC and GaN materials. Delivering semi-insulating substrates and nitride epitaxy options up to the newly available diameter of 150mm, Wolfspeed materials enable performance far exceeding that of any other technology, for telecom, aerospace, or defense applications with world-leading bandwidth, efficiency and frequency of operation.

When you partner with Wolfspeed, you get the best and most innovative materials.

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Product Descriptions

Wolfspeed produces GaN, AlxGa1-xN and Al1-yInyN epitaxial layers on SiC substrates. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications (1). Contact Wolfspeed Materials Sales for specification on custom epitaxy requests. Additional comments, terms and conditions may be found in the specification document.

Nitride Epitaxial Layer Specifications – Structural

Property
Value or Range
Precision
Measurement
Technique
Substrate
On-axis SiC (Semi-Insulating)
-
-
Composition (2)
AlxGa1-xN or Al1-yInyN
0 ≤ x ≤ 0.3, 0 ≤ y ≤ 0.2, certain restrictions apply
Δ x = ± 0.015
Δ y = ± 0.02
XRD peak splitting
Thickness (3)
1.0 μm to 3.0 μm GaN
0.5 nm to 1.0 μm AlN
1.0 nm to 1.0 μm AlxGa1-xN
1.0 nm to 1.0 μm Al1-yInyN
2.0 nm to 5.0 nm GaN (Cap Layer)
5.0 nm to 100 nm SiN (Cap Layer)
Average
thickness within
± 15% of target
thickness and
uniformity
<10%. (4)
X-ray or white light
interferometry
GaN Crystallinity
< 250 arcsec (3 μm layer on SiC substrate)
-
XRD (0006) FWHM
(center point)
Al0.25Ga0.75N
< 500 arcsec (3 μm layer on SiC substrate)
-
XRD (0006) FWHM
(center point) (5)
Visible Defects
< 50/cm2
-
Differential
interference
microscopy at 50x
in cross pattern
with 5 mm edge
exclusion

Nitride Epitaxial Layer Specifications – Electrical

Property
Value or Range
Precision
Measurement
Technique
Dopant type
n-type (Si)
HEMT buffer (Fe and/or C)
-
-
Carrier concentration
(unintentionally doped)
< 1E16/cm3, n-type
-
CV
Carrier concentration
(n-type, Si doped)
1E16 to 2E19/cm3
± 50%
CV (wafer center,
room temperature)
Carrier concentration
of HEMT structure
>8E12/cm2
(25 nm Al0.25Ga0.75N)
-
Contactless
non-destructive
carrier concentration
Mobility of HEMT structure
μ ≥ 1500 cm2 V-1 s-1
(25 nm Al0.25Ga0.75N)
-
Contactless
non-destructive
mobility
Sheet resistivity
< 5% uniformity
-
Contactless
non-destructive
sheet resistivity

Notes:

  1. Certain additional restrictions may apply and will be presented on the product quotation.
  2. Quaternary compositions available upon special request.
  3. Range given for undoped layers. Maximum achievable thickness for doped layers or heterostructures will be reduced.
  4. Precision specification applies only to layers ≥ 0.01 μm thick. Uniformity = (100 x standard deviation / mean). Edge Exclusion is applied.
  5. Please specify epitaxy structure details upon submission of RFQ (i.e. thickness, doping, composition, for each layer).
  6. Custom structures available. Contact Wolfspeed Materials Sales for more information on custom epitaxy requests.

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