Skip to Main Content
  • English
  • 简体中文
  • 繁體中文
View Cart
SiC Materials

Nitride Epitaxy

Wolfspeed has transitioned to a new wafer scribe format based upon SEMI specification M12-0523. This conversion has been completed on 150mm diameter wafer products. The M12-based scribe is positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. The new format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such events. 100mm products will remain Wolfspeed’s legacy scribe.​

Proven Expertise in SiC & GaN Materials for RF Applications

With more than 30 years of development and manufacturing experience, Wolfspeed is driving innovation with the industry’s broadest range of SiC and GaN materials. Delivering semi-insulating substrates and nitride epitaxy options up to the newly available diameter of 150mm, Wolfspeed materials enable performance far exceeding that of any other technology, for telecom, aerospace, or defense applications with world-leading bandwidth, efficiency and frequency of operation.

When you partner with Wolfspeed, you get the best and most innovative materials.

HPSI and Nitride Epitaxy Line CardDownload

View as InfographicOpen in New Tab/Window

Product Descriptions

Wolfspeed produces GaN, AlxGa1-xN and Al1-yInyN epitaxial layers on SiC substrates. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications (1). Contact Wolfspeed Materials Sales for specification on custom epitaxy requests. Additional comments, terms and conditions may be found in the specification document.

Nitride Epitaxial Layer Specifications – Structural

Value or Range
On-axis SiC (Semi-Insulating)
Composition (2)
AlxGa1-xN or Al1-yInyN
0 ≤ x ≤ 0.3, 0 ≤ y ≤ 0.2, certain restrictions apply
Δ x = ± 0.015
Δ y = ± 0.02
XRD peak splitting
Thickness (3)
1.0 μm to 3.0 μm GaN
0.5 nm to 1.0 μm AlN
1.0 nm to 1.0 μm AlxGa1-xN
1.0 nm to 1.0 μm Al1-yInyN
2.0 nm to 5.0 nm GaN (Cap Layer)
5.0 nm to 100 nm SiN (Cap Layer)
thickness within
± 15% of target
thickness and
<10%. (4)
X-ray or white light
GaN Crystallinity
< 250 arcsec (3 μm layer on SiC substrate)
XRD (0006) FWHM
(center point)
< 500 arcsec (3 μm layer on SiC substrate)
XRD (0006) FWHM
(center point) (5)
Visible Defects
< 50/cm2
microscopy at 50x
in cross pattern
with 5 mm edge

Nitride Epitaxial Layer Specifications – Electrical

Value or Range
Dopant type
n-type (Si)
HEMT buffer (Fe and/or C)
Carrier concentration
(unintentionally doped)
< 1E16/cm3, n-type
Carrier concentration
(n-type, Si doped)
1E16 to 2E19/cm3
± 50%
CV (wafer center,
room temperature)
Carrier concentration
of HEMT structure
(25 nm Al0.25Ga0.75N)
carrier concentration
Mobility of HEMT structure
μ ≥ 1500 cm2 V-1 s-1
(25 nm Al0.25Ga0.75N)
Sheet resistivity
< 2% uniformity
sheet resistivity


  1. Certain additional restrictions may apply and will be presented on the product quotation.
  2. Quaternary compositions available upon special request.
  3. Range given for undoped layers. Maximum achievable thickness for doped layers or heterostructures will be reduced.
  4. Precision specification applies only to layers ≥ 0.01 μm thick. Uniformity = (100 x standard deviation / mean). Edge Exclusion is applied.
  5. Please specify epitaxy structure details upon submission of RFQ (i.e. thickness, doping, composition, for each layer).
  6. Custom structures available. Contact Wolfspeed Materials Sales for more information on custom epitaxy requests.

Tools & Support

HPSI and Nitride Epitaxy Line Card

Knowledge Center

View All
Air Conditioning

Beat the Heat This Summer with Wolfspeed SiC in Residential & Commercial Air Conditioners and Heat Pumps 

Silicon carbide is revolutionizing the heat pump and air conditioning industry by delivering unprecedented efficiency, enhanced durability, and superior performance in the most challenging of environments.
Continue Reading  Technical Articles

The Silicon Carbide Landscape and Advantage

Wolfspeed’s silicon carbide expert Guy Moxey kicks of Wolfspeed’s 2024 Designer’s Guide by exploring the proliferation of silicon carbide across applications, including electric vehicles, industrial motor drives and e-mobility, and ways Wolfspeed is meeting growing global demand.
View Now  Webinars

Silicon Carbide Device Modeling

Learn how designers new to silicon carbide can leverage Wolfspeed’s design support tools to generate models that solve system design challenges. During this session learn which Wolfspeed design tools are best suited to your application.
View Now  Webinars


Social Media

  • Instagram
  • X
  • LinkedIn
  • YouTube
Copyright © 2024 Wolfspeed, Inc.