Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as medical power supplies; aerospace; and traction drives.
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Blocking Voltage | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|
CAB760M12HM3R | HM High Performance 62 mm | 1200 V | 1.33 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | Yes | Industrial |
Document Type | Document Name |
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| User Guide | |
| Design Files | |
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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| Sales Terms |
