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HM Power Module Family

HM family of power module
1200 V & 1700 V Half-Bridge Power Module Footprint Designed for Ultra-High Power Density

Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide (SiC) in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as industrial test equipment, medical power supplies, aerospace and traction drives.

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HM Power Module Family

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CAS480M12HM3
HM High Performance 62 mm
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
CAR600M12HN6
New
HM High Performance 62 mm
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
CAB760M12HM3
HM High Performance 62 mm
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
CAB760M12HM3R
New
HM High Performance 62 mm
Half-Bridge Right GK for Paralleling
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
CAS380M17HM3
New
HM High Performance 62 mm
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
CAB500M17HM3
New
HM High Performance 62 mm
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
CAR600M17HN6
New
HM High Performance 62 mm
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
CAB650M17HM3
New
HM High Performance 62 mm
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial

Product Details

Features
  • High Performance 62mm Footprint
  • Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses
  • High Junction Temperature (175 °C) Operation
  • Configurations Available with both Second & Third Generation SiC MOSFETs
  • Lightweight AlSiC Baseplate
  • Silicon Nitride Insulator for Robust Thermal Cycling Capability
Benefits
  • Lightweight; Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency; due to Low Switching & Conduction Losses of Silicon Carbide
  • High-Reliability Material Selection enabling High-Temperature Operation
Applications
  • Railway & Traction
  • Solar & Renewable Energy
  • EV Chargers
  • Industrial Automation & Testing
  • Medical Power Supplies
  • Motor Drives

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