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1200 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1200 V, 20 A, TO-247-3 package, Gen 4 Discrete SiC Schottky Diode
Wolfspeed's 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.


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1200 V Discrete Silicon Carbide Schottky Diodes

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1200 V Discrete Silicon Carbide Schottky Diodes

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1200 V
20 A
1.5 V per leg
20 A
52 nC per leg
352 W

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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