Features
- Leading silicon carbide MOSFET technology in an industry standard form factor
- Highest current rated topologies versus market equivalents
- Built in NTC
- Press-Fit connections
Product SKU | Buy Online | Request Sample | Data Sheet | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification |
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CAB011A12GM3T New | GM3 | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial |
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Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
User Guide | |
User Guide | |
User Guide | |
Videos | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Sheets & Flyers | |
Sales Sheets & Flyers | |
Sales Sheets & Flyers | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Sales Terms |