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C3M0030090K

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0030090K
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900 V, 30 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm).  To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance, which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Products

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900 V Discrete Silicon Carbide MOSFETs

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900 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Maximum Junction Temperature
Package
Status
Qualification
C3M0030090K
900 V
30 mΩ
63 A
150 °C
TO-247-4
Active
Industrial

Product Details

Features
  • Minimum of 900V Vbr across entire operating temperature range
  • Low-impedance package with driver source
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Benefits
  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size; weight; and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Motor Control
  • EV Charging Systems
  • Uninterruptible Power Supply (UPS)
  • Battery management systems
  • Fast EV-Charging Systems
  • Onboard charging
  • Drivetrain
  • Welding

Documents, Tools & Support

Display All SKUs in Product Family (7)

Documents

Document Type
Document Name
Last Updated
Data Sheets
01/2024
Application Notes
01/2024
Application Notes
01/2024
Application Notes
11/2023
Application Notes
05/2023
Application Notes
01/2023
Application Notes
10/2022
Application Notes
09/2022
Application Notes
11/2021
Test Report
03/2022
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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