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CRD 06600FF065N K

6.6 kW High Power Density Bi-Directional EV On-Board Charger

Wolfspeed's CRD-06600FF065N-K 6.6 kW High Power Density Bi-Directional EV On-Board Charger
CRD-06600FF065N-K

This reference design demonstrates the application of Wolfspeed’s 650V C3M™ SiC MOSFETs to create a high power density electric vehicle (EV) on-board charger (OBC). This design leverages the high frequency switching capabilities of Wolfspeed 650V C3M™ SiC MOSFETs to create a smaller; lighter and cost effective system. This reference design is offered as a comprehensive design package which can be used as a starting point for new SiC designs.

The design accomplishes:

  • Peak efficiencies of 96.5%
  • Power densities of 53W/in^3 or 3KW/L

Specifications

  • Universal single phase input voltage between 90V and 265V
  • Output Voltage of 250V-450V DC
  • 18A Output Current in charging mode
  • Front End AC/DC PFC using CCM Totem-Pole Bi-Directional Topology operating at 67Khz
  • Bi-Directional DC/DC CLLC resonant converter operating at 148-300KHz
  • Constant Current; Constant Voltage or Constant Power Mode
  • Unique integrated heatsink design removes heat from MOSFET’s; transformer and inductors
  • CAN Interface
Applications
  • EV On-Board Charger
What's Included

Reference Design Files for

  • Main board
  • Controller Board
  • Aux Power Board
Request Separately
  • Firmware and GUI
  • Mechanical Specifications
crd_06600ff065n_k_block_diagram
Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

UCC5350

5A, 3kV, Isolated Gate Driver with Internal Miller Clamp for Q2, Q3, Q6, Q7, Q8, Q9, Q10, Q11, Q12, Q13, Q14, and Q15

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UCC5350

5A, 3kV, Isolated Gate Driver with Internal Miller Clamp for Q2, Q3, Q6, Q7, Q8, Q9, Q10, Q11, Q12, Q13, Q14, and Q15

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F2837x C2000 real-time microcontroller

MCU with control algorithms for the AC-DC and DC-DC Stages

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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si8234bb_is_block
Si8233BB

4A, 2.5kV Isolated Dual Channel gate Driver for Q4 and Q5

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c3m0060065d_block
C3M0060065D

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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c3m0060065d_block
C3M0060065D

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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Custom Potted Heatsink Assembly

Novel design incorporating magnetics, resonant capacitors, and SiC MOSFETs in a single thermal block for simple attachment to a cold plate

ADuM262N or Si8662

5.0kV 6 channel isolator providing supplemental isolation for secondary PWM signals

ADuM262N
Si8662

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