6.6 kW Bi-Directional Totem-Pole PFC and CLLC, High Power Density

CRD-06600FF065N-K

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This reference design demonstrates the application of Wolfspeed's 650V E-Series Silicon Carbide MOSFETs to create a high power density electric vehicle (EV) on-board charger (OBC). This design leverages the high frequency switching capabilities of the C3M0060065D/K Silicon Carbide MOSFETs in a TO-247 package to create a smaller; lighter and cost effective system. This reference design is offered as a comprehensive design package which can be used as a starting point for new Silicon Carbide designs.

The design accomplishes:

Peak efficiencies of 96.5%
Power densities of 53W/in^3 or 3KW/L

Specifications

Universal single phase input voltage between 90V and 265V
Output Voltage of 250V-450V DC
18A Output Current in charging mode
Front End AC/DC PFC using CCM Totem-Pole Bi-Directional Topology operating at 67Khz
Bi-Directional DC/DC CLLC resonant converter operating at 148-300KHz
Constant Current; Constant Voltage or Constant Power Mode
Unique integrated heatsink design removes heat from MOSFET’s; transformer and inductors
CAN Interface

Product Shot of a Wolfspeed 6.6 kW High Power Density Bi-Directional EV On-Board Charger reference design

Product Shot of a Wolfspeed 6.6 kW High Power Density Bi-Directional EV On-Board Charger reference design

Knowledge Center

Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices

Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.

Continue Reading Technical Articles

Add Miles and Years of Performance to Your Next 800-V EV Traction Inverter Platform

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Gen 4 Silicon Carbide Technology:
Redefining Performance and Durability in High-Power Applications

Continue Reading White Paper

Documents, Tools & Support

Block Diagram
Technical & Sales Documents
Tools & Support

crd 06600ff065n k block diagram

crd 06600ff065n k block diagram

Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

Isolated DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

UCC5350

5A, 3kV, Isolated Gate Driver with Internal Miller Clamp for Q2, Q3, Q6, Q7, Q8, Q9, Q10, Q11, Q12, Q13, Q14, and Q15

UCC5350

5A, 3kV, Isolated Gate Driver with Internal Miller Clamp for Q2, Q3, Q6, Q7, Q8, Q9, Q10, Q11, Q12, Q13, Q14, and Q15

F2837x C2000 real-time microcontroller

MCU with control algorithms for the AC-DC and DC-DC Stages

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0060065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Si8233BB

4A, 2.5kV Isolated Dual Channel gate Driver for Q4 and Q5

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C3M0060065D

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C3M0060065D

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Custom Potted Heatsink Assembly

Novel design incorporating magnetics, resonant capacitors, and SiC MOSFETs in a single thermal block for simple attachment to a cold plate

ADuM262N or Si8662

5.0kV 6 channel isolator providing supplemental isolation for secondary PWM signals

ADuM262N
Si8662