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900V Discrete Silicon Carbide MOSFETs

900V Discrete Silicon Carbide MOSFETs

Wolfspeed 900V Discrete Silicon Carbide MOSFETs
Silicon Carbide solutions for fast switching power devices
SpeedFit Design SimulatorLTspice & PLECS Models

Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm).  To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance; which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based; three-level topologies to simpler two-level topologies made possible by the improved switching performance.

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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0065090J
900 V
65 mΩ
Gen 3
35 A
30 nC
66 pF
113 W
150 °C
TO-263-7
Yes
Industrial
C3M0065090D
900 V
65 mΩ
Gen 3
36 A
30 nC
66 pF
125 W
150 °C
TO-247-3
Yes
Industrial
C3M0120090D
900 V
120 mΩ
Gen 3
17 nC
40 pF
97 W
150 °C
TO-247-3
Yes
Industrial
C3M0280090D
900 V
280 mΩ
Gen 3
9.5 nC
20 pF
54 W
150 °C
TO-247-3
Yes
Industrial
C3M0120090J
900 V
120 mΩ
Gen 3
22 A
17 nC
40 pF
83 W
150 °C
TO-263-7
Yes
Industrial
C3M0280090J
900 V
280 mΩ
Gen 3
11.5 A
9.5 nC
20 pF
50 W
150 °C
TO-263-7
Yes
Industrial
C3M0030090K
900 V
30 mΩ
Gen 3
63 A
87 nC
131 pF
149 W
150 °C
TO-247-4
Yes
Industrial
Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0065090J
900 V
65 mΩ
Gen 3
35 A
30 nC
66 pF
113 W
150 °C
TO-263-7
Yes
Industrial
C3M0065090D
900 V
65 mΩ
Gen 3
36 A
30 nC
66 pF
125 W
150 °C
TO-247-3
Yes
Industrial
C3M0120090D
900 V
120 mΩ
Gen 3
17 nC
40 pF
97 W
150 °C
TO-247-3
Yes
Industrial
C3M0280090D
900 V
280 mΩ
Gen 3
9.5 nC
20 pF
54 W
150 °C
TO-247-3
Yes
Industrial
C3M0120090J
900 V
120 mΩ
Gen 3
22 A
17 nC
40 pF
83 W
150 °C
TO-263-7
Yes
Industrial
C3M0280090J
900 V
280 mΩ
Gen 3
11.5 A
9.5 nC
20 pF
50 W
150 °C
TO-263-7
Yes
Industrial
C3M0030090K
900 V
30 mΩ
Gen 3
63 A
87 nC
131 pF
149 W
150 °C
TO-247-4
Yes
Industrial
Features
  • Minimum of 900V Vbr across entire operating temperature range
  • Low-impedance package with driver source
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Benefits
  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size; weight; and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Motor Control
  • EV Charging Systems
  • Uninterruptible Power Supply (UPS)
  • Battery management systems
  • Fast EV-Charging Systems
  • Onboard charging
  • Drivetrain
  • Welding
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[Design only; boards no longer available]
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Design Files
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Application Notes
Application Notes
[Design only; boards no longer available]
Application Notes
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Data Sheets
Data Sheets
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Design Files
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