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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

900 V Discrete Silicon Carbide MOSFETs

900 V Silicon Carbide (SiC) solutions for fast switching power devices
Note Last Time Buy.
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm).  To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance; which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based; three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Parametric Data

900 V Discrete Silicon Carbide MOSFETs

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900 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
C3M0065090D
NRND
900 V
65 mΩ
36 A
150 °C
TO-247-3
Industrial
Last Time Buy
900 V
120 mΩ
23 A
150 °C
TO-247-3
Industrial
Last Time Buy
900 V
280 mΩ
11.5 A
150 °C
TO-247-3
Industrial
Last Time Buy
900 V
30 mΩ
63 A
150 °C
TO-247-4
Industrial
NRND
900 V
65 mΩ
35 A
150 °C
TO-263-7
Industrial
Last Time Buy
900 V
120 mΩ
22 A
150 °C
TO-263-7
Industrial
Last Time Buy
900 V
280 mΩ
11.5 A
150 °C
TO-263-7
Industrial

Product Details

Features
  • Minimum of 900V Vbr across entire operating temperature range
  • Low-impedance package with driver source
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Benefits
  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size; weight; and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Typical Applications
  • Motor Control
  • EV Charging Systems
  • Uninterruptible Power Supply (UPS)
  • Battery management systems
  • Fast EV-Charging Systems
  • Onboard charging
  • Drivetrain
  • Welding

Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
12/2023
Application Notes
09/2024
Application Notes
07/2024
Application Notes
01/2024
Application Notes
01/2024
Application Notes
12/2023
Application Notes
11/2023
Application Notes
05/2023
Application Notes
01/2023
Application Notes
09/2022
Application Notes
11/2021
Test Report
03/2022
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

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