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1700V Discrete SiC MOSFETs

1700V Discrete SiC MOSFETs

Wolfspeed 1700V Silicon Carbide (SiC) MOSFETs and Diodes
Faster switching and enhanced reliability for next-generation power conversion
SpeedFit Design SimulatorLTspice & PLECS Models

Wolfspeed 1700V SiC MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions; Wolfspeed silicon carbide technology enables increased system power density; higher switching frequencies; smaller designs; cooler components; reduced size of components like inductors; capacitors; filters & transformers; and overall cost benefits.

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C2M1000170J
1700 V
1000 mΩ
Gen 2
5.3 A
13 nC
12 pF
78 W
150 °C
TO-263-7
Yes
Industrial
C2M0045170D
1700 V
45 mΩ
Gen 2
72 A
188 nC
171 pF
520 W
150 °C
TO-247-3
Yes
Industrial
C2M0045170P
1700 V
45 mΩ
Gen 2
188 nC
171 pF
520 W
150 °C
TO-247-4 Plus
Yes
Industrial
C2M0080170P
1700 V
80 mΩ
Gen 2
40 A
120 nC
105 pF
277 W
150 °C
TO-247-4 Plus
Yes
Industrial
C2M1000170D
1700 V
800 mΩ
Gen 2
5 A
22 nC
19 pF
69 W
150 °C
TO-247-3
Yes
Industrial
Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C2M1000170J
1700 V
1000 mΩ
Gen 2
5.3 A
13 nC
12 pF
78 W
150 °C
TO-263-7
Yes
Industrial
C2M0045170D
1700 V
45 mΩ
Gen 2
72 A
188 nC
171 pF
520 W
150 °C
TO-247-3
Yes
Industrial
C2M0045170P
1700 V
45 mΩ
Gen 2
188 nC
171 pF
520 W
150 °C
TO-247-4 Plus
Yes
Industrial
C2M0080170P
1700 V
80 mΩ
Gen 2
40 A
120 nC
105 pF
277 W
150 °C
TO-247-4 Plus
Yes
Industrial
C2M1000170D
1700 V
800 mΩ
Gen 2
5 A
22 nC
19 pF
69 W
150 °C
TO-247-3
Yes
Industrial
Features
  • High blocking voltage with low RDS(on)
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Low parasitic inductance
  • Wide creepage and clearance distance between drain and source
Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Separate Kelvin source pin lowers source inductance and provides up to 30% lower switching losses
  • Optimized packing with wide creepage and clearance distance between drain and source (~8mm) providing extra electrical isolation suitable for high pollution environments
Applications
  • Auxiliary power supplies
  • Switch mode power supplies
  • Power inverters
  • 1500V solar inverters
  • High voltage DC-DC converters
  • Motor drives
  • Pulsed power applications
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[Design only; boards no longer available]
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