Faster switching and enhanced reliability for next-generation power conversion
Wolfspeed 1700 V Silicon Carbide (SiC) MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions; Wolfspeed Silicon Carbide technology enables increased system power density; higher switching frequencies; smaller designs; cooler components; reduced size of components like inductors; capacitors; filters & transformers; and overall cost benefits.
Parametric Data
1700 V Discrete Silicon Carbide MOSFETs
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1700 V Discrete Silicon Carbide MOSFETs - Filter By
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Low parasitic inductance
Wide creepage and clearance distance between drain and source
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Separate Kelvin source pin lowers source inductance and provides up to 30% lower switching losses
Optimized packing with wide creepage and clearance distance between drain and source (~8mm) providing extra electrical isolation suitable for high pollution environments
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
The design and geometry of power modules enable EMI modeling which empowers designers to predict and understand their system’s EMI behavior early in the design process.
Join Wolfspeed Applications Engineer Chris New as he unboxes the 25 kW three-phase inverter reference design and demonstrates how to get started evaluating power electronic system performance right out of the box.