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1700 V Discrete Silicon Carbide MOSFETs

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-4 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Faster switching and enhanced reliability for next-generation power conversion
Wolfspeed 1700 V Silicon Carbide (SiC) MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions; Wolfspeed Silicon Carbide technology enables increased system power density; higher switching frequencies; smaller designs; cooler components; reduced size of components like inductors; capacitors; filters & transformers; and overall cost benefits.

Products

1700 V Discrete Silicon Carbide MOSFETs

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1700 V Discrete Silicon Carbide MOSFETs - Filter By

1700 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C2M0045170D
1700 V
45 mΩ
Gen 2
75 A
200 nC
171 pF
520 W
150 °C
TO-247-3
Yes
Industrial
C2M1000170D
1700 V
1000 mΩ
Gen 2
5 A
22 nC
19 pF
69 W
150 °C
TO-247-3
Yes
Industrial
C2M0045170P
1700 V
45 mΩ
Gen 2
75 A
204 nC
171 pF
338 W
150 °C
TO-247-4 Plus
Yes
Industrial
C2M1000170J
1700 V
1000 mΩ
Gen 2
5.3 A
13 nC
12 pF
78 W
150 °C
TO-263-7
Yes
Industrial

Product Details

Features
  • High blocking voltage with low RDS(on)
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Low parasitic inductance
  • Wide creepage and clearance distance between drain and source
Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Separate Kelvin source pin lowers source inductance and provides up to 30% lower switching losses
  • Optimized packing with wide creepage and clearance distance between drain and source (~8mm) providing extra electrical isolation suitable for high pollution environments
Applications
  • Auxiliary power supplies
  • Switch mode power supplies
  • Power inverters
  • 1500 V solar inverters
  • High voltage DC-DC converters
  • Motor drives
  • Pulsed power applications

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Data Sheets
Data Sheets
Data Sheets
Product Catalog
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum
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