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1700 V Discrete Silicon Carbide MOSFETs

1700 V Discrete Silicon Carbide MOSFETs

Wolfspeed 1700V Silicon Carbide (SiC) MOSFETs and Diodes
Faster switching and enhanced reliability for next-generation power conversion
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Wolfspeed 1700 V Silicon Carbide (SiC) MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions; Wolfspeed Silicon Carbide technology enables increased system power density; higher switching frequencies; smaller designs; cooler components; reduced size of components like inductors; capacitors; filters & transformers; and overall cost benefits.

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Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C2M1000170J
1700 V
1000 mΩ
Gen 2
13 nC
12 pF
78 W
150 °C
TO-263-7
Yes
Industrial
C2M0045170D
1700 V
45 mΩ
Gen 2
188 nC
171 pF
520 W
150 °C
TO-247-3
Yes
Industrial
C2M1000170D
1700 V
Gen 2
5 A
69 W
150 °C
TO-247-3
Yes
Industrial
C2M0045170P
1700 V
45 mΩ
Gen 2
72 A
188 nC
171 pF
520 W
150 °C
TO-247-4 Plus
Yes
Industrial
Features
  • High blocking voltage with low RDS(on)
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Low parasitic inductance
  • Wide creepage and clearance distance between drain and source
Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Separate Kelvin source pin lowers source inductance and provides up to 30% lower switching losses
  • Optimized packing with wide creepage and clearance distance between drain and source (~8mm) providing extra electrical isolation suitable for high pollution environments
Applications
  • Auxiliary power supplies
  • Switch mode power supplies
  • Power inverters
  • 1500 V solar inverters
  • High voltage DC-DC converters
  • Motor drives
  • Pulsed power applications
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Fast Charging

Designing with Silicon Carbide in Unidirectional On-Board Chargers

Wolfspeed Silicon Carbide MOSFETs address many power design challenges by providing devices with low on-resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses. Read on to learn how these advantages are applied in higher-power unidirectional OBCs.
Continue Reading 
 Technical Articles

3.6kW Bridgeless Totem-Pole PFC Reference Design Training

Join Yuequan Hu, Power Applications Engineer with Wolfspeed, as he demonstrates the application of Wolfspeed’s C3M™ 650 V Silicon Carbide MOSFET Technology in TOLL package to create a 3.6kW bridgeless totem-pole PFC for server power supply, data center power supply, mining power supply, and telecom systems.
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