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Peak Output Power 130W at PIN = 35dBm
Application General-Purpose Broadband, 28 V
Operating Voltage 28 V
Frequency DC - 2.5 GHz
Package Type Flange and Pill
Small Signal Gain 20 dB
Drain Efficiency 70% @ PSAT
Technology GaN on SiC

120-W, RF Power GaN HEMT

SKU: CG2H40120


Wolfspeed’s CG2H40120 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CG2H40120 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

Features

  • Un-matched input and output
  • 120 W (CW) typical Pout at PSAT
  • 20 dB Typical Small Signal Gain at 1.3 GHz
  • 28 V Operation

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