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Peak Output Power 6W
Application General-Purpose Broadband, 40 V
Typical Power (PSAT) 8 W
Operating Voltage 40 V
Frequency DC - 15.0 GHz
Package Type Surface Mount
Gain 7 dB @ 6.0 GHz 15 dB @ 9.0 GHz
Technology GaN on SiC

6-W, DC - 15.0 GHz, 40-V, GaN HEMT


Wolfspeed’s CGHV1F006S is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band amplifier applications. The data sheet specifications are based on a C-Band (5.5 – 6.5-GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 – 9.6 GHz. The CGHV1F006S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40 V to as low as 20-V VDD, maintaining high gain and efficiency.


  • Up to 15-GHz operation
  • Application circuits for:
    5.8 – 7.2 GHz
    7.9 – 8.4 GHz
    8.5 – 9.6 GHz



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