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Peak Output Power 150W
Application Radar
Power Gain 13.5 dB @ TCase = 85°C
Frequency 2.9 - 3.5 GHz
Package Type Flange/Pill
Drain Efficiency 50 @ TCase = 85°C
Internal Matching Input matched
Technology GaN on SiC

150-W, 2900 – 3500-MHz, 50-V, GaN HEMT for S-Band Radar Systems

SKU: CGHV35150

Wolfspeed’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.


  • Rated power = 150 W @ TCASE = 85°C
  • Transient 100 μsec – 300 μsec @ 20% duty cycle



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