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CGHV35150

Wolfspeed CGHV35150 composite flange and pill package
150 W; 2900 – 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems
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Wolfspeed’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

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CGHV35150

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CGHV35150

Product SKU
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Data Sheet
CAD Model
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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV35150P
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
13.5 dB
50%
50 V
Packaged Discrete Transistor
Pill
CGHV35150F-AMP
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
13.5 dB
50%
Evaluation Board
Flange
CGHV35150F
Yes
GaN on SiC
2.9 GHz
3.5 GHz
150 W
13.5 dB
50%
50 V
Packaged Discrete Transistor
Flange
Features
  • Rated Power = 150 W @ TCASE = 85°C
  • Operating Frequency = 2.9 – 3.5 GHz
  • Transient 100 μsec – 300 μsec @ 20% Duty Cycle
  • 13.5 dB Power Gain @ TCASE = 85°C
  • 50 % Typical Drain Efficiency @ TCASE = 85°C
  • Input Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • S-Band Radar amplifiers

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

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