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CGHV40030

CGHV40030

Wolfspeed CGHV40030 30-W DC – 6-GHz 50-V GaN HEMT
30-W; DC – 6-GHz; 50-V; GaN HEMT
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Wolfspeed’s CGHV40030 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities. The device can be deployed for L; S and C-Band amplifier applications. The data sheet specifications are based on a 0.96 – 1.4 GHz amplifier. The CGHV40030 operates on a 50-volt rail circuit while housed in a 2-lead flange or pill package.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV40030P
Yes
GaN on SiC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Pill
CGHV40030F-AMP2
Yes
GaN on SiC
0.5 GHz
2.7 GHz
30 W
16 dB
NA
50 V
Evaluation Board
Flange
CGHV40030F
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV40030P
Yes
GaN on SiC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Pill
CGHV40030F-AMP2
Yes
GaN on SiC
0.5 GHz
2.7 GHz
30 W
16 dB
NA
50 V
Evaluation Board
Flange
CGHV40030F
Yes
GaN on SiC
DC
6 GHz
30 W
16 dB
70%
50 V
Packaged Discrete Transistor
Flange
Features
  • Up to 6 GHz Operation
  • 30 W Typical Output Power
  • 16 dB Gain
  • Application circuit for 0.96 – 1.4 GHz
  • 70% Efficiency at PSAT
  • 50 V Operation
Applications
  • L; S and C-Band amplifiers
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Document Type
Document Name
Application Notes
Application Notes
Application Notes
Operating at 50 V and 100 W
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Operating at 50 V and 100 W
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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