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Peak Output Power 170W
Application General-Purpose Broadband, 50 V
Typical Power Added Efficiency PAE 65 %
Typical Power (PSAT) 170 W
Operating Voltage 50 V
Breakdown Voltage High
Frequency 6.0 GHz
Package Type Die
Small Signal Gain 18 dB @ 4 GHz 17 dB @ 6 GHz

170-W, 6.0-GHz, 50-V GaN HEMT Die

SKU: CGHV60170D


Wolfspeed’s CGHV60170D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Features

  • Up to 6-GHz operation

Documents