Continue Reading Technical Articles
CMPA0530002

2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications
Wolfspeed’s CMPA0530002 is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the input. The CMPA0530002 operates on a 28 volt rail while housed in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 28V to as low as 20V VDD; maintaining high gain and efficiency.
Products
CMPA0530002
No filters selected, showing all 2 products
CMPA0530002
Product SKU | Buy Online | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA0530002S-AMP1 | Yes | GaN on SiC | 0.5 GHz | 3 GHz | 2 W | 18 dB | 52% | 28 V | Packaged MMIC | Surface Mount | |||
CMPA0530002S | Yes | GaN on SiC | 0.5 GHz | 3 GHz | 2 W | 18 dB | 52% | 28 V | Packaged MMIC | Surface Mount |
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
---|---|
Application Notes | |
Application Notes | |
Design Files | |
Data Sheets | |
S-parameters | |
S-parameters | |
S-parameters | |
Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
Product Catalog | |
Sales Terms |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading Technical Articles