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CMPA1D1E025

CMPA1D1E025

cmpa1d1e025f_med_1
25-W; 13.75 to 14.5-GHz; 40-V; Ku-Band GaN MMIC Power Amplifier

Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead; 25-mm x 9.9-mm; metal/ceramic flanged package for optimal electrical and thermal performance.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E025F
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
CMPA1D1E025F-AMP
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E025F
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
CMPA1D1E025F-AMP
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Features
  • 24 dB Small Signal Gain
  • 40 W Typical Pulsed PSAT
  • Operation up to 40 V
  • 20 W linear power under OQPSK
  • Class A/B high gain; high efficiency 50 ohm MMIC Ku Band high power amplifier
Applications
  • Satellite Communications Uplink
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Application Notes
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Design Files
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Data Sheets
Design Files
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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