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Peak Output Power 25W
Application Satellite Communications
Typical Power Added Efficiency PAE 16 % @ 13.75 GHz
Typical Power (PSAT) 40 W
Linear Output Power 20 W @ 13.75 GHz
Power Gain 21.5 dB @ 13.75 GHz
Operating Voltage 40 V
Frequency 13.5 - 14.5 GHz
Package Type Flange
Small Signal Gain 26 dB
Technology GaN on SiC

25-W, 13.75 to 14.5-GHz, 40-V, Ku-Band
GaN MMIC Power Amplifier


Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead, 25-mm x 9.9-mm, metal/ceramic flanged package for optimal electrical and thermal performance.

  • PAVE = 42 dBm, IM3 = -30 dBc, -33 dBc OQPSK offset 
  • Class A/B high-gain, high-efficiency, 50-ohm MMIC Ku Band high-power amplifier



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