Document Name | Date Updated | Download |
---|---|---|
CMPA1D1E030D | Aug 26, 2015 |
CMPA1D1E030D

Peak Output Power | 30W | |
---|---|---|
Application | Satellite Communications | |
Typical Power Added Efficiency PAE | 25 % | |
Typical Power (PSAT) | 34 W | |
Operating Voltage | 40 V | |
Frequency | 13.75 - 14.5 GHz | |
Package Type | Die | |
Small Signal Gain | 26 dB |
30-W, 13.75 to 14.5-GHz, 40-V, GaN MMIC Power Amplifier
SKU: CMPA1D1E030D
Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity.