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CMPA1D1E030D

Wolfspeed Ku-Band GaN MMIC Bare Die
Peak Output Power 30W
Application Satellite Communications
Typical Power Added Efficiency PAE 25 %
Typical Power (PSAT) 34 W
Operating Voltage 40 V
Frequency 13.75 - 14.5GHz
Package Type Die
Small Signal Gain 26 dB

30-W, 13.75 to 14.5-GHz, 40-V, GaN MMIC Power Amplifier

SKU: CMPA1D1E030D

Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity.

Documents

Data Sheets

Document Name Date Updated Download
CMPA1D1E030D Aug 26, 2015

RF Application Notes

Document Name Date Updated Download
15 Years of GaN MMIC Technology Leadership Oct 25, 2016
Eutectic Die Attach Procedure
Version: A
Sep 3, 2015
GaN MMIC PAs Support the Rapid Growth of Ku Band Applications Nov 7, 2016

RF Product Ecology

Document Name Date Updated Download
GaN MMIC Chips RoHS Declaration
Version: RS4069092017
CMPA0060002D, CMPA0060025D, CMPA1C1D060D, CMPA1D1E030D, CMPA1D1E050D, CMPA2060025D, CMPA2560025D, CMPA2735075D, CMPA5585025D, CMPA5585030D, CMPA601C025D, CMPA801B025D, CMPA901A040D
Nov 12, 2018

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Nov 12, 2018

Technical Papers & Articles

Document Name Date Updated Download
A Review of GaN on SiC HEMTs and MMICs
Version: Design
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Sep 26, 2018
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018