CMPA5259050

50-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers

Wolfspeed’s CMPA5259050 is a 60W MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA5259050 family operates from 5.0-5.9 GHz and supports both defense and commercial-related radar applications. The CMPA5259050 achieves 60 W of saturated output power with 23 dB of large signal gain and typically 50% power-added efficiency under pulsed operation. CW operation is also an option.

The CMPA5259050 provides improved RF performance over previous generations allowing customers to improve SWaP-C benchmarks in their next-generation systems.

Products

CMPA5259050

Product SKU	Recommended For New Design?	Technology	Frequency Min	Frequency Max	Peak Output Power	Gain	Efficiency	Operating Voltage	Form	Package Type
CMPA5259050D1 New	Yes	GaN on SiC	5 GHz	5.9 GHz	60 W	23 dB	50%	28 V	MMIC Bare Die	Die
CMPA5259050F-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CMPA5259050D	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	MMIC Bare Die	Die
CMPA5259050F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CMPA5259050F-AMP	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Evaluation Board	Flange
CMPA5259050S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	50%	28 V	Packaged MMIC	Surface Mount

Features

31 dB Small Signal Gain
50 W Typical PSAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation

Applications

AESA Radar
Defense Radar
Fire Control Radar
Naval; Marine; Ground Protection Radar
Weather Radar

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Technical Papers & Articles	by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles	by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles	by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles	by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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