Features
- 28 dB Small Signal Gain
- 35 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
CMPA801B025
25 W; 8.0 – 11.0 GHz; GaN MMIC Power Amplifier
Note: CMPA801B025 is Discontinued. Refer to CMPA801B030F1/S
Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. It is available in a die; 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
Products
CMPA801B025
CMPA801B025
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA801B025F-AMP | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28 V | Evaluation Board | Flange | ||
CMPA801B025P | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28 V | Packaged MMIC | Pill | ||
CMPA801B025D | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 28 dB | 45% | 28 V | MMIC Bare Die | Die | ||
CMPA801B025F | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28 V | Packaged MMIC | Flange |
Applications
- Point to Point Radio
- Communications
- Test Instrumentation
- EMC Amplifiers
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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