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GTRA214602FC-V1

High Power RF GaN on SiC HEMT; 490 W; 48 V; 2110 – 2170 MHz

The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA214602FC-V1
Yes
GaN on SiC
2.11 GHz
2.17 GHz
490 W
14.4 dB
59%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Input matched
  • Asymmetric Doherty design
    • Main: P3dB = 170 W Typ
    • Peak: P3dB = 350 W Typ
  • Typical pulsed CW performance: 16 μs pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixture
    • Gain = 15 dB @ 49 dBm
    • Efficiency = 59% @ 49 dBm
    • Output power at P3dB = 490 W
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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