Skip to Main Content
Contact
浏览产品 (中文)

GTRA384802FC-V1

High Power RF GaN on SiC HEMT 400 W; 48 V; 3600 – 3800 MHz

The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching; high efficiency; and a thermally-enhanced package with earless flange.

GTRA384802FC-V1

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA384802FC-V1
Yes
GaN on SiC
3.6 GHz
3.8 GHz
400 W
13 dB
42%
48 V
Earless
Features
  • Input matched
  • Asymmetrical Doherty design: Main P3dB 200 W Typ; Peak P3dB 280 W Typ
  • Typical Pulsed CW performance; 3800 MHz; 48 V; combined outputs; 10% duty cycle
  • Output power 400 W
  • Efficiency 62%
  • Gain 13 dB
  • Capable of handling 10:1 VSWR @48 V; 63 W (WCDMA) output power
  • Pb-free and RoHS complian
Applications
  • Multi-standard Cellular Power Amplifiers

Documents

Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.