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GTRB246608FC-V1

H-37248KC-6-2 package type with Wolfspeed logo
High Power RF GaN on SiC HEMT 600 W, 48 V, 2300 – 2400 MHz

The GTRB246608FC is a 600-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

GTRB246608FC-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB246608FC-V1
New
Yes
GaN on SiC
2.3 GHz
2.4 GHz
500 W
15.7 dB
54%
48 V
Earless
Features

Typical Pulsed CW performance, 2400 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs

  • Output power at P4dB = 600 W
  • Efficiency at P4dB = 60%

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