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GTVA107001EC/FC-V1
High Power RF GaN on SiC HEMT 700 W; 50 V; 960 – 1215 MHz
The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching; high efficiency; and thermally-enhanced packages; with bolt-down flange.
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GTVA107001EC/FC-V1
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GTVA107001EC/FC-V1
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA107001EFC-V1 | Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 700 W | 20 dB | 70% | 50 V | Packaged Discrete Transistor | Bolt Down |
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Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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