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GTVA261701FA-V1

High Power RF GaN on SiC HEMT 170 W; 50 V; 2.62 - 2.69 GHz

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

GTVA261701FA-V1

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA261701FA-V1
Yes
GaN on SiC
2.3 GHz
2.7 GHz
170 W
17 dB
43%
50 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 2690 MHz; 48 V
  • Output power P3dB 170 W
  • Efficiency 75 %
  • Gain 15 dB
  • Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
  • RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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