Features
- Input matched
- Typical Pulsed CW performance; 2690 MHz; 48 V; 10% duty cycle
- Output power P3dB 270 W
- Efficiency 66 %
- Gain 18.1 dB
- Capable of handling 10:1 VSWR @ 48 V; 60 W (WCDMA) output power
- Pb-free and RoHS compliant
GTVA262701FA-V2
High Power RF GaN on SiC HEMT 270 W; 48 V; 2620 – 2690 MHz
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced surface-mount package with earless flange.
Products
GTVA262701FA-V2
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GTVA262701FA-V2
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA262701FA-V2 | Yes | GaN on SiC | 2.62 GHz | 2.69 GHz | 270 W | 17 dB | 42% | 48 V | Earless |
Applications
- Multi-standard Cellular Power Amplifiers
Documents, Tools & Support
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Documents
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Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Reference Designs | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Product Catalog | |
| Sales Sheets & Flyers | |
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Knowledge Center
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